{"id":28787,"date":"2026-05-25T16:05:00","date_gmt":"2026-05-25T14:05:00","guid":{"rendered":"https:\/\/www.chinasmartbuy.com\/blog\/?p=28787"},"modified":"2026-05-25T15:07:18","modified_gmt":"2026-05-25T13:07:18","slug":"samsung-vnand-900-strati-prototipo","status":"publish","type":"post","link":"https:\/\/www.chinasmartbuy.com\/blog\/samsung-vnand-900-strati-prototipo\/","title":{"rendered":"Samsung V-NAND a 900 strati: il nuovo chip flash prototipo"},"content":{"rendered":"\n\n<style>\n  :root {\n    --red: #CC1B1B;\n    --red-light: rgba(204,27,27,0.08);\n    --red-mid: #e84040;\n    --accent-soft-bg: rgba(204,27,27,0.07);\n    --accent-soft-border: rgba(204,27,27,0.18);\n    --text: #1a1a1a;\n    --text-muted: #666;\n    --card: #ffffff;\n    --border: #ebebeb;\n    --page-bg: #ffffff;\n    --surface-soft: #fafafa;\n    --surface-contrast: #f0f0f0;\n    --line-soft: #f5f5f5;\n    --soft-label: #bbb;\n    --muted-label: #999;\n    --copy: #333;\n    --font-head: 'Bebas Neue', sans-serif;\n    --font-body: 'DM Sans', sans-serif;\n    --heading-spacing: 0.04em;\n    --heading-weight: 400;\n    --spec-header-spacing: 0.08em;\n    --quickfacts-shadow: 0 10px 24px rgba(15,23,42,0.06);\n  }\n  .fbp5-wrap,.fbp5-wrap * { box-sizing:border-box; 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}\n  }\n<\/style>\n<div class=\"fbp5-wrap rh-json-article\" id=\"rh-article-mpl80u5i-eek4c\" data-rh-article-type=\"news\" data-rh-site-profile=\"china-smart-buy\">\n  <div class=\"fbp5-intro\">\n    \n    <p>Samsung sostiene di aver sviluppato il primo prototipo al mondo di chip di memoria flash V-NAND a <strong>900 strati<\/strong>, un risultato che alza ancora l\u2019asticella nella memoria NAND per storage e data center. Il nuovo chip usa una tecnica chiamata <strong>Cell Multi-Bonding<\/strong> per unire due wafer da 450 strati in un unico componente.<\/p><p>La mossa serve soprattutto a ribadire la leadership tecnologica nel settore delle memorie, in un momento in cui la domanda di NAND e DRAM cresce per effetto dei carichi di lavoro legati all\u2019intelligenza artificiale. Nel mirino c\u2019\u00e8 anche la concorrenza di SK Hynix e del cinese YMTC, due nomi sempre pi\u00f9 aggressivi nel segmento ad alta densit\u00e0.<\/p>\n  <\/div><figure class=\"wp-block-image size-large\" style=\"margin:18px 0;display:block;clear:both;width:100%;position:relative;z-index:1\"><a href=\"https:\/\/www.chinasmartbuy.com\/blog\/wp-content\/uploads\/2026\/05\/samsung-v-nand-a-900-strati-samsung-1tb-qlc-9th-gen-v-na-1m1zqin13u.webp\" target=\"_blank\" rel=\"noopener\" style=\"display:block;width:100%;position:relative;z-index:2;pointer-events:auto;cursor:zoom-in\"><img decoding=\"async\" src=\"https:\/\/www.chinasmartbuy.com\/blog\/wp-content\/uploads\/2026\/05\/samsung-v-nand-a-900-strati-samsung-1tb-qlc-9th-gen-v-na-1m1zqin13u.webp\" alt=\"https:\/\/www.sammobile.com\/wp-content\/uploads\/2024\/09\/Samsung-1Tb-QLC-9th-Gen-V-NAND-Storage-Chip.jpg\" loading=\"lazy\" style=\"display:block;max-width:100%;height:auto;margin:0 auto;pointer-events:auto\"><\/a><\/figure>\n  \n\n      <section class=\"fbp5-section\">\n        <div class=\"fbp5-section-label\">Tecnologia<\/div>\n        <h2>Samsung spinge la V-NAND a 900 strati con un <span>prototipo record<\/span><\/h2>\n        <p>Il prototipo annunciato da Samsung rappresenta un salto importante nella densit\u00e0 di archiviazione. La logica \u00e8 semplice: pi\u00f9 strati NAND vengono impilati, maggiore \u00e8 la capacit\u00e0 ottenibile a parit\u00e0 di spazio, con un vantaggio anche sul fronte dei consumi energetici.<\/p><p>Nel nuovo progetto, Samsung ha lavorato su un\u2019architettura a <strong>900 strati classe V-NAND<\/strong> e ha usato la tecnologia <strong>Cell Multi-Bonding<\/strong> per unire due wafer da 450 strati. \u00c8 una soluzione pensata per spingere oltre i limiti fisici della stratificazione tradizionale.<\/p>\n        <ul class=\"fbp5-bullet-list\"><li>Prototipo di memoria flash V-NAND a <strong>900 strati<\/strong>.<\/li><li>Tecnologia <strong>Cell Multi-Bonding<\/strong>: unione di due wafer da <strong>450 strati<\/strong>.<\/li><li>Obiettivo: pi\u00f9 densit\u00e0 di archiviazione e consumi pi\u00f9 contenuti.<\/li><li>Il chip \u00e8 ancora in fase di ricerca, non in produzione di massa.<\/li><\/ul>\n        <div class=\"rh-quickfacts-grid\">\n      <div class=\"rh-quickfacts-card\">\n        <div class=\"rh-quickfacts-label\">Status<\/div>\n        <div class=\"rh-quickfacts-value\">Prototipo<\/div>\n      <\/div>\n    <\/div>\n        <div class=\"fbp5-highlight\">Il punto pi\u00f9 rilevante non \u00e8 solo il numero di strati, ma il fatto che Samsung stia testando una strada tecnica per superare i limiti della stratificazione tradizionale e ridurre al tempo stesso dimensioni e consumi.<\/div>\n        <div class=\"fbp5-info\">Il chip \u00e8 stato presentato come prototipo e non c\u2019\u00e8 un annuncio di disponibilit\u00e0 commerciale o di prezzo. L\u2019interesse riguarda soprattutto la futura capacit\u00e0 produttiva e il posizionamento tecnologico nel mercato NAND.<\/div>\n        \n      <\/section>\n    \n\n      <section class=\"fbp5-section\">\n        <div class=\"fbp5-section-label\">Mercato<\/div>\n        <h2>La sfida con SK Hynix e YMTC passa dalla memoria per <span>l\u2019intelligenza artificiale<\/span><\/h2>\n        <p>Samsung arriva a questo traguardo mentre SK Hynix \u00e8 considerata un riferimento nel segmento NAND ad alto numero di strati con i suoi chip da <strong>321 strati<\/strong>. Sullo sfondo c\u2019\u00e8 anche YMTC, che ha gi\u00e0 avviato la produzione di NAND da <strong>294 strati<\/strong>.<\/p><p>La competizione non riguarda solo il numero di strati, ma anche la capacit\u00e0 di sostenere la domanda generata dall\u2019intelligenza artificiale. In questo contesto, memorie pi\u00f9 dense e pi\u00f9 efficienti diventano un vantaggio concreto per server, storage di fascia alta e infrastrutture data center.<\/p>\n        <ul class=\"fbp5-bullet-list\"><li>SK Hynix \u00e8 attualmente forte nel segmento ad alto numero di strati con chip da <strong>321 strati<\/strong>.<\/li><li>YMTC ha gi\u00e0 iniziato la produzione di NAND da <strong>294 strati<\/strong>.<\/li><li>Samsung sta anche preparando la produzione di massa di NAND di <strong>decima generazione a 400 strati<\/strong>.<\/li><li>La spinta verso l\u2019AI rende la densit\u00e0 e l\u2019efficienza energetica sempre pi\u00f9 importanti.<\/li><\/ul>\n        <div class=\"rh-quickfacts-grid\">\n      <div class=\"rh-quickfacts-card\">\n        <div class=\"rh-quickfacts-label\">Rivale principale<\/div>\n        <div class=\"rh-quickfacts-value\">SK Hynix<\/div>\n      <\/div>\n    \n      <div class=\"rh-quickfacts-card\">\n        <div class=\"rh-quickfacts-label\">Altro concorrente<\/div>\n        <div class=\"rh-quickfacts-value\">YMTC<\/div>\n      <\/div>\n    \n      <div class=\"rh-quickfacts-card\">\n        <div class=\"rh-quickfacts-label\">Uso strategico<\/div>\n        <div class=\"rh-quickfacts-value\">Memorie per AI e storage ad alta densit\u00e0<\/div>\n      <\/div>\n    <\/div>\n        <div class=\"fbp5-highlight\">Samsung sta correndo su due binari: da un lato il prototipo a 900 strati, dall\u2019altro la preparazione della produzione di massa a 400 strati. \u00c8 un segnale chiaro di quanto la partita sulla NAND sia ormai centrale.<\/div>\n        <div class=\"fbp5-info\">Non emerge una data ufficiale per la commercializzazione del chip a 900 strati. Il dato pi\u00f9 utile \u00e8 il posizionamento tecnologico, non una scheda prodotto gi\u00e0 pronta per il mercato.<\/div>\n        \n      <\/section>\n    \n<\/div><div class=\"rh-attribution-pills\" style=\"display:flex;gap:10px;flex-wrap:wrap;justify-content:flex-start;margin:16px 0 0\"><a href=\"https:\/\/www.sammobile.com\/news\/samsung-makes-world-first-900-layer-storage-chip-prototype\/\" target=\"_blank\" rel=\"noopener\" title=\"Via: - SamMobile\" aria-label=\"Via: - SamMobile\" style=\"display:inline-flex;align-items:center;gap:8px;padding:10px 16px;border-radius:16px;background:linear-gradient(135deg,#fff7ed,#ffedd5);color:#c2410c;text-decoration:none;font-size:11px;font-weight:900;letter-spacing:.08em;text-transform:uppercase;border:1px solid rgba(249,115,22,.20);box-shadow:0 8px 22px rgba(249,115,22,.08)\">Via<\/a><\/div>\n","protected":false},"excerpt":{"rendered":"<p>Samsung annuncia un prototipo di memoria flash V-NAND a 900 strati con Cell Multi-Bonding, puntando su densit\u00e0 pi\u00f9 alta e consumi ridotti.<\/p>\n","protected":false},"author":5,"featured_media":20121,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_exactmetrics_skip_tracking":false,"_yoast_wpseo_focuskw_text_input":"Samsung V-NAND 900 strati","footnotes":""},"categories":[480],"tags":[542],"class_list":["post-28787","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-news","tag-samsung"],"blocksy_meta":{"styles_descriptor":{"styles":{"desktop":"","tablet":"","mobile":""},"google_fonts":[],"version":8}},"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v28.6 - https:\/\/yoast.com\/product\/yoast-seo-wordpress\/ -->\n<title>Samsung V-NAND a 900 strati: il nuovo chip flash prototipo<\/title>\n<meta name=\"description\" content=\"Samsung mostra un prototipo V-NAND a 900 strati con Cell Multi-Bonding. 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